(Hong Kong)
Product Summary
The BSM150GB120DN2F is an IGBT Power Module.
Parametrics
BSM150GB120DN2F absolute maximum ratings: (1)Collector-emitter voltage: 1200 V; (2)Collector-gate voltage: 1200 V at RGE = 20 kW; (3)Gate-emitter voltage: ± 20 V; (4)DC collector current: 210 A at TC = 25 ℃, 150 A at TC = 80 ℃; (5)Pulsed collector current, tp = 1 ms: 420 A at TC = 25 ℃, 300 A at TC = 80 ℃; (6)Power dissipation per IGBT: 1250 W at TC = 25 ℃; (7)Chip temperature: + 150 ℃; (8)Storage temperature: -55 to + 150 ℃.
Features
BSM150GB120DN2F features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
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 BSM150GB120DN2F |
Infineon Technologies |
IGBT Modules IGBT 1200V 150A |
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BSM150GB120DN2F_E3256 |
Infineon Technologies |
IGBT Modules IGBT 1200V 150A |
Data Sheet |
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