Product Summary

The MG25Q6ES42 is a 4.0V silicon N channel IGBT. The applications of it are high power switching applications, motor control applications.

Parametrics

MG25Q6ES42 absolute maximum ratings: (1)collector-emitter voltage:1200V; (2)gate-emitter voltage:±20V; (3)collector current: IC:25A, ICP:50A; (4)forward current: IF:25A, IFM:50A; (5)collector power dissipation:200W; (6)junction temperature:150℃; (7)storage temperature range:-40 to 125℃; (8)isolation voltage:2500V(AC 1 minute); (9)screw torque:3N.m.

Features

MG25Q6ES42 features: (1)the electrodes are isolated from case; (2)6 IGBTs are built into 1 package; (3)enhancement-mode; (4)low saturation voltage: VCE(sat)=4.0V(max.); (5)high speed: tf=0.5us(max.), trr=0.5us(max.).

Diagrams

MG25Q6ES42 circuit diagram

MG251A
MG251A

Other


Data Sheet

Negotiable 
MG251C
MG251C

Other


Data Sheet

Negotiable 
MG256
MG256

Other


Data Sheet

Negotiable 
MG2580A2-376B
MG2580A2-376B

Maxim Integrated Products

CODECs

Data Sheet

Negotiable 
MG2590
MG2590

Other


Data Sheet

Negotiable