(Hong Kong)
Product Summary
The MG600Q1US51 is a silicon N channel IGBT module. The applications include high power switch, motor control.
Parametrics
MG600Q1US51 absolute maximum rating: (1)Collector-emitter voltage: 1200V; (2)Gate-emitter voltage: ±20V; (3)collector current: 600A; (4)Forward current: 600A; (5)Collector power dissipation: 4100W; (6)Junction temperature: 150℃; (7)Isolation voltage: 2500V.
Features
MG600Q1US51 features: (1)High input impedance; (2)High speed; (3)Low saturation voltage; (4)Enhancement mode; (5)Include a complete half bridge in one package; (6)The electrodes are isolated from case.
Diagrams
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 MG600J2YS60A |
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Data Sheet |
Negotiable |
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MG600J2YS61A |
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IGBT MOD CMPCT DUAL 600V 600A |
Data Sheet |
Negotiable |
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MG600Q1US61 |
Other |
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Data Sheet |
Negotiable |
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MG600Q2YS60A |
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IGBT MOD CMPCT 1200V 600A |
Data Sheet |
Negotiable |
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