Product Summary

The PM150RSE120 is an intelligent power module. It adopts new 4th generation planar IGBT chip, which performance is improved by 1μm fine rule process.

Parametrics

PM150RSE120 absolute maximum ratings: (1)Collector-Emitter Voltage, VD = 15V, VCIN = 15V, VCES: 1200V; (2)Collector Current, TC = 25℃ ±IC: 150V; (3)Collector Current (Peak), TC = 25℃ ±ICP: 300A; (4)Collector Dissipation, TC = 25℃ PC: 781W; (5)Junction Temperature, Tj: -20 to +150℃.

Features

PM150RSE120 features: (1)3φ 150A, 1200V Current-sense IGBT for 15kHz switching; (2)50A, 1200V Current-sense regenerative brake IGBT; (3)Monolithic gate drive & protection logic; (4)Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage; (5)Acoustic noise-less 30kW class inverter application.

Diagrams

PM150RSE120 PACKAGE OUTLINES

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PM150RSE120
PM150RSE120

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PM150CBS060
PM150CBS060

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PM150CL1A060
PM150CL1A060

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PM150CL1A120
PM150CL1A120

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PM150CL1B060
PM150CL1B060

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PM150CLA060
PM150CLA060


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PM150CLA120


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Data Sheet

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