Product Summary

The TGI8596-50 is a high-gain, high-power X-band GaN hybrid IC.

Parametrics

TGI8596-50 absolute maximum ratings: (1)Drain-Source Voltage: 50 V; (2)Gate-Source Voltage: -10 V; (3)Drain Current: 15 A; (4)Total Power Dissipation (Tc= 25 °C): 140 W; (5)Channel Temperature: 250°C; (6)Storage Temperature: -65 to +175°C.

Features

TGI8596-50 features: (1)high power:Pout=47.0dBm at Pin=41.0dBm; (2)broad band internally matched hemt hermetically sealed package; (3)high gain: GL=9.0dB at 8.5GHz to 9.6GHz.

Diagrams

TGI8596-50 block diagram